- Model : QRD1114
- Type : Reflective
- Maximum Power Dissipation : 100mW
- Maximum Collector Emitter Voltage : 30V
- Number of Channels per Chip : 1
Description:
The QRD1114 reflective sensor consists of an infrared (IR) emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector. This sensor uses an infrared emitted diode combined with an infrared phototransistor to detect the reflected infrared signal. Ideal for sensing black-to-white transitions or can be used to detect nearby objects (.5-1cm). The QRD1114 is a half-LED, half-phototransistor, all infrared reflective optical detector. It can be used to sense objects in close proximity or even detect the difference between black and white surfaces. Photodetectors like these are critical components for projects ranging from line-following robots to close-proximity detection in smartphones.
Specification:
- Model : QRD1114
- Type : Reflective
- Maximum power dissipation: 100mW
- Maximum forward current: 50mA
- Peak wavelength: 940nm
Features:
- Phototransistor Output
- No contact surface sensing
- Unfocused for sensing diffused surfaces
- Compact Package
- Daylight filter on sensor
Package Included:
1 x Optical Detector / Phototransistor QRD1114