- Type - p-n-p
- Collector-Emitter Voltage: -150 V
- Collector-Base Voltage: -160 V
- Emitter-Base Voltage: -5 V
Description:
2N5401 is specifically designed to be used in high voltage applications where load consumes very less power (i.e. Current drawn by load is low). These types of circuits can be seen in telephone systems. It can also be used when you want a simple switching device for high voltage loads. Also the component is cheap and easy to work with.
Specification:
- Type - p-n-p
- Collector-Emitter Voltage: -150 V
- Collector-Base Voltage: -160 V
- Emitter-Base Voltage: -5 V
- Collector Current: -0.6 A
- Collector Dissipation - 0.625 W
- DC Current Gain (hfe) - 60 to 240
- Transition Frequency - 100 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
Pin Description:
The 2N5401 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
Package Included:
1 x 2N5401 Bipolar Transistor