- Low Voltage, High Current NPN Transistor
- Small Signal Transistor
- Maximum Power: 2 Watts
- Maximum DC Current Gain (hFE) is 400
- Continuous Collector current (IC) is 700mA
- Base-Emitter Voltage (VBE) is 5V
- Collector-Emitter Voltage (VCE) is 20V
- Collector-Base Voltage (VCB) is 30V
- High Used in push-pull configuration doe Class B amplifiers
- Available in To-92 Package
DESCRIPTION
S8050 is an NPN transistor
- Hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin.
- It has a maximum gain value of 400; this value determines the amplification capacity of the transistor normally S8050.
- Since it is very high it is normally used for amplification purposes.
- However, at a normal operating collector current, the typical value of gain will be 110.
- The maximum amount of current that could flow through the Collector pin is 700mA, hence we cannot drive loads that consume more than 700mA using this transistor.
- To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 5mA.
- When this transistor is fully biased then it can allow a maximum of 700mA to flow across the collector and emitter.
- This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (VCE) or Collector-Base (VCB) could be 20V and 30V respectively.
- When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region.